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IPB065N15N3GATMA1
Power MOSFET, N Channel, 150 V, 130 A, 0.0065 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB065N15N3GATMA1Copy
Manufacturer Standard Lead Time40 weeks
Newark Part No.
Re-Reel85X6014RL
Cut Tape85X6014
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 40 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $8.210 | $8.21 |
| Total Price | $8.21 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $8.210 |
| 10+ | $5.520 |
| 25+ | $5.020 |
| 50+ | $4.500 |
| 100+ | $4.000 |
| 250+ | $3.890 |
| 500+ | $3.770 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB065N15N3GATMA1Copy
Manufacturer Standard Lead Time40 weeks
Newark Part No.
Re-Reel85X6014RL
Cut Tape85X6014
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id130A
On Resistance Rds(on)0.0052ohm
Drain Source On State Resistance0.0065ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
Power Dissipation Pd300W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
- OptiMOS™ P3 power transistor
- N-channel normal level
- Excellent gate charge xR DS(on) product (FOM)
- Very low on-resistance RDS(on)
- 175°C operating temperature
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-21
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.0052ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
No. of Pins
7Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
130A
Drain Source On State Resistance
0.0065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate