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IPB036N12N3GATMA1
Power MOSFET, N Channel, 120 V, 180 A, 0.0036 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB036N12N3GATMA1
Newark Part No.47W3463
Also Known AsIPB036N12N3 G, SP000675204
Your Part Number
5,965 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $6.950 |
| 10+ | $4.760 |
| 25+ | $4.340 |
| 50+ | $3.910 |
| 100+ | $3.490 |
| 250+ | $3.440 |
| 500+ | $3.390 |
Price for:Each
Minimum: 1
Multiple: 1
$6.95
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB036N12N3GATMA1
Newark Part No.47W3463
Also Known AsIPB036N12N3 G, SP000675204
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id180A
Drain Source On State Resistance0.0036ohm
On Resistance Rds(on)0.0029ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd300W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPB036N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Qualified according to JEDE for target applications
- Halogen-free, Green device
- Ideal for high-frequency switching and synchronous rectification
- Normal level
- 100% Avalanche tested
Applications
Power Management, Motor Drive & Control, Computers & Computer Peripherals, Portable Devices, LED Lighting
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
120V
Drain Source On State Resistance
0.0036ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
300W
Gate Source Threshold Voltage Max
3V
No. of Pins
7Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
180A
On Resistance Rds(on)
0.0029ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
