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IPB013N06NF2SATMA1
MOSFET, N-CH, 60V, 198A, TO-263 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB013N06NF2SATMA1
Newark Part No.
Re-Reel68AK5309
Cut Tape68AK5309
Product RangeStrongIRFET 2 Series
Your Part Number
Technical Datasheet
773 In Stock
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Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $7.11 |
| 10+ | $4.18 |
| 25+ | $3.97 |
| 50+ | $3.78 |
| 100+ | $3.58 |
| 250+ | $3.50 |
| 500+ | $3.43 |
| 1600+ | $3.22 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB013N06NF2SATMA1
Newark Part No.
Re-Reel68AK5309
Cut Tape68AK5309
Product RangeStrongIRFET 2 Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id198A
Drain Source On State Resistance1000µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeStrongIRFET 2 Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
198A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.3V
No. of Pins
3Pins
Product Range
StrongIRFET 2 Series
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability