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IPA80R1K4CEXKSA2
MOSFET, N-CH, 800V, 3.9A, TO-220FP-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPA80R1K4CEXKSA2
Newark Part No.13AC9018
Your Part Number
Technical Datasheet
Available to Order
Delivery estimated post order confirmations.You will be charged on dispatch.
| Quantity | Price |
|---|---|
| 1+ | $2.79 |
| 10+ | $1.72 |
| 100+ | $1.42 |
| 500+ | $1.11 |
| 1000+ | $0.99 |
| 2500+ | $0.95 |
| 10000+ | $0.94 |
Price for:Each
Minimum: 1
Multiple: 1
$2.79
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPA80R1K4CEXKSA2
Newark Part No.13AC9018
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id3.9A
On Resistance Rds(on)1.22ohm
Drain Source On State Resistance1.22ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd31W
Gate Source Threshold Voltage Max3V
Power Dissipation31W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
1.22ohm
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
3.9A
Drain Source On State Resistance
1.22ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
31W
Power Dissipation
31W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability