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IMT65R033M2HXUMA1
Silicon Carbide MOSFET, Single, N Channel, 68 A, 650 V, 0.03 ohm, HSOF
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMT65R033M2HXUMA1
Newark Part No.
Re-Reel26AM1124
Cut Tape26AM1124
Product RangeCoolSiC Gen 2 Series
Your Part Number
Technical Datasheet
144 In Stock
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50 Delivery in 1-3 Business Days(US stock)
94 Delivery in 2-4 Business Days(UK stock)
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Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $7.670 |
| 10+ | $5.270 |
| 25+ | $4.930 |
| 50+ | $4.600 |
| 100+ | $4.270 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMT65R033M2HXUMA1
Newark Part No.
Re-Reel26AM1124
Cut Tape26AM1124
Product RangeCoolSiC Gen 2 Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id68A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.03ohm
Transistor Case StyleHSOF
No. of Pins8Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation312W
Operating Temperature Max175°C
Product RangeCoolSiC Gen 2 Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
68A
Drain Source On State Resistance
0.03ohm
No. of Pins
8Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
HSOF
Rds(on) Test Voltage
20V
Power Dissipation
312W
Product Range
CoolSiC Gen 2 Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate