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IMT65R010M2HXUMA1
Silicon Carbide MOSFET, Single, N Channel, 168 A, 650 V, 9100 µohm, HSOF
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ManufacturerINFINEON
Manufacturer Part NoIMT65R010M2HXUMA1
Newark Part No.26AM1120
Product RangeCoolSiC Gen 2 Series
Your Part Number
500 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $17.990 |
| 10+ | $13.000 |
| 25+ | $12.810 |
| 50+ | $12.660 |
| 100+ | $12.520 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$17.99
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMT65R010M2HXUMA1
Newark Part No.26AM1120
Product RangeCoolSiC Gen 2 Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id168A
Drain Source Voltage Vds650V
Drain Source On State Resistance9100µohm
Transistor Case StyleHSOF
No. of Pins8Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation681W
Operating Temperature Max175°C
Product RangeCoolSiC Gen 2 Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
168A
Drain Source On State Resistance
9100µohm
No. of Pins
8Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
HSOF
Rds(on) Test Voltage
20V
Power Dissipation
681W
Product Range
CoolSiC Gen 2 Series
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate