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IMBG120R045M1HXTMA1
MOSFET, SIC, N-CH, 1.2KV, 47A, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG120R045M1HXTMA1
Newark Part No.
Re-Reel92AH5308
Cut Tape92AH5308
Product RangeCoolSiC Mosfet 1200V G2
Your Part Number
Technical Datasheet
1,346 In Stock
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Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $17.330 |
| 10+ | $12.070 |
| 25+ | $11.530 |
| 50+ | $10.980 |
| 100+ | $10.440 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG120R045M1HXTMA1
Newark Part No.
Re-Reel92AH5308
Cut Tape92AH5308
Product RangeCoolSiC Mosfet 1200V G2
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id47A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.045ohm
On Resistance Rds(on)0.045ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.5V
Power Dissipation227W
Power Dissipation Pd227W
Operating Temperature Max175°C
Product RangeCoolSiC Mosfet 1200V G2
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.045ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.5V
Power Dissipation Pd
227W
Product Range
CoolSiC Mosfet 1200V G2
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
47A
Drain Source On State Resistance
0.045ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
227W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate