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IMBG120R030M1HXTMA1
MOSFET, SIC, N-CH, 1.2KV, 56A, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG120R030M1HXTMA1
Newark Part No.
Re-Reel92AH5307
Cut Tape92AH5307
Product RangeCoolSiC Mosfet 1200V G2
Your Part Number
Technical Datasheet
666 In Stock
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Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $19.680 |
| 10+ | $13.810 |
| 25+ | $13.310 |
| 50+ | $12.820 |
| 100+ | $12.320 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG120R030M1HXTMA1
Newark Part No.
Re-Reel92AH5307
Cut Tape92AH5307
Product RangeCoolSiC Mosfet 1200V G2
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id56A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.03ohm
Drain Source On State Resistance30mohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd300W
Power Dissipation300W
Operating Temperature Max175°C
Product RangeCoolSiC Mosfet 1200V G2
SVHCNo SVHC (25-Jun-2025)
Product Overview
IMBG120R030M1HXTMA1 is a CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology. Typical application includes drives, infrastructure – charger, energy generation - solar string inverter and solar optimizer and industrial power supplies - industrial UPS.
- DC drain current is 56A, drain-source on-state resistance is 30mohm(VGS = 18V, ID = 25A, Tvj = 25°C)
- Very low switching losses
- Short circuit withstand time 3µs
- Fully controllable dV/dt
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- Package creepage and clearance distance greater than 6.1mm
- Sense pin for optimized switching performance
- Available in 7 pin TO-263 package
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
30mohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
300W
Product Range
CoolSiC Mosfet 1200V G2
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
On Resistance Rds(on)
0.03ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation Pd
300W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate