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IGT60R190D1ATMA1
Gallium Nitride (GaN) Transistor, 600 V, 12 A, 0.14 ohm, 3.2 nC, PG-HSOF-8-3, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIGT60R190D1ATMA1
Newark Part No.
Re-Reel78AK6124
Cut Tape78AK6124
Product RangeCoolGaN Series
Your Part Number
No Longer Available
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIGT60R190D1ATMA1
Newark Part No.
Re-Reel78AK6124
Cut Tape78AK6124
Product RangeCoolGaN Series
Drain Source Voltage Vds600V
Continuous Drain Current Id12A
Drain Source On State Resistance0.14ohm
Typical Gate Charge3.2nC
Transistor Case StylePG-HSOF-8-3
Transistor MountingSurface Mount
No. of Pins8Pins
Product RangeCoolGaN Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.14ohm
Transistor Case Style
PG-HSOF-8-3
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
12A
Typical Gate Charge
3.2nC
Transistor Mounting
Surface Mount
Product Range
CoolGaN Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability