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FZ2000R33HE4BOSA1
IGBT Module, Single Switch, 2 kA, 2.45 V, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoFZ2000R33HE4BOSA1
Newark Part No.52AH3775
Product RangeIHM-B Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 57 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2,365.440 |
Price for:Each
Minimum: 1
Multiple: 1
$2,365.44
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoFZ2000R33HE4BOSA1
Newark Part No.52AH3775
Product RangeIHM-B Series
Technical Datasheet
IGBT ConfigurationSingle Switch
Continuous Collector Current2kA
DC Collector Current2kA
Collector Emitter Saturation Voltage Vce(on)2.2V
Collector Emitter Saturation Voltage2.45V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationTab
Collector Emitter Voltage V(br)ceo3.3kV
Collector Emitter Voltage Max3.3kV
IGBT TechnologyIGBT 4 [Trench/Field Stop]
Transistor MountingPanel
Product RangeIHM-B Series
SVHCNo SVHC (21-Jan-2025)
Product Overview
FZ2000R33HE4BOSA1 is a IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode. Potential applications includes motor drives, traction drives, UPS systems, medium-voltage converters, high-power converters, active frontend (energy recovery). Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068.
- AlSiC base plate for increased thermal cycling capability
- High power density, isolated base plate
- High DC stability, high short-circuit capability
- Low switching losses, unbeatable robustness
- Stray inductance module is 6nH (typ)
- Module lead resistance, terminals - chip is 0.08mohm (TC = 25 °C, per switch)
- Collector-emitter voltage is 3300V (Tvj = -40°C)
- Repetitive peak collector current is 4000A (tp limited by Tvj op)
- Gate threshold voltage is 5.80V (typ, IC = 94mA, VCE = VGE, Tvj = 25°C)
- Temperature under switching conditions range from -40 to 150°C
Technical Specifications
IGBT Configuration
Single Switch
DC Collector Current
2kA
Collector Emitter Saturation Voltage
2.45V
Power Dissipation
-
Junction Temperature, Tj Max
150°C
IGBT Termination
Tab
Collector Emitter Voltage Max
3.3kV
Transistor Mounting
Panel
SVHC
No SVHC (21-Jan-2025)
Continuous Collector Current
2kA
Collector Emitter Saturation Voltage Vce(on)
2.2V
Power Dissipation Pd
-
Operating Temperature Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage V(br)ceo
3.3kV
IGBT Technology
IGBT 4 [Trench/Field Stop]
Product Range
IHM-B Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability