FM25V20A-DGQ

FM25V20A-DGQ is a 2-Mbit (256 K × 8) serial (SPI) F-RAM memory. It 2-Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. The FM25V20A is capable of supporting 10^14 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the FM25V20A ideal for non-volatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The FM25V20A provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.

• No delay writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 33MHz frequency
• Direct hardware replacement for serial flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection, hardware protection using the write protect (active-low WP) pin
• S/W protection using write disable instruction, software block protection for 1/4, 1/2/whole array
• Low voltage operation: VDD=2V to 3.6V
• VDD supply current is 3mA at fSCK=33MHz
• VDD standby current is 100µA typ at active-low CS=VDD, all other inputs VSS or VDD, TA=25°C
• 8-pin DFN package, extended temperature range from -40°C to +105°C