Print Page
FF6MR12KM1PHOSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 250 A, 1.2 kV, 0.00581 ohm, Module
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoFF6MR12KM1PHOSA1
Newark Part No.82AH4540
Product RangeCoolSiC C
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Transistor PolarityDual N Channel
Continuous Drain Current Id250A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance5810µohm
On Resistance Rds(on)0.00581ohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.5V
Power Dissipation-
Power Dissipation Pd-
Operating Temperature Max150°C
Product RangeCoolSiC C
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Transistor Polarity
Dual N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.00581ohm
No. of Pins
-
Gate Source Threshold Voltage Max
4.5V
Power Dissipation Pd
-
Product Range
CoolSiC C
Channel Type
Dual N Channel
Continuous Drain Current Id
250A
Drain Source On State Resistance
5810µohm
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
-
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2018)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate