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FF3MR20W3M1HH11BPSA1
Silicon Carbide MOSFET, Half Bridge, N Channel, 275 A, 2 kV, 0.0041 ohm, Module
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ManufacturerINFINEON
Manufacturer Part NoFF3MR20W3M1HH11BPSA1
Newark Part No.27AM0048
Product RangeEasyPACK Series
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15 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $426.520 |
| 5+ | $417.470 |
| 16+ | $408.420 |
| 32+ | $399.360 |
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Multiple: 1
$426.52
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF3MR20W3M1HH11BPSA1
Newark Part No.27AM0048
Product RangeEasyPACK Series
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id275A
Drain Source Voltage Vds2kV
Drain Source On State Resistance0.0041ohm
Transistor Case StyleModule
No. of Pins52Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.15V
Power Dissipation-
Operating Temperature Max175°C
Product RangeEasyPACK Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
FF3MR20W3M1HH11BPSA1 is an EasyPACK™ module with CoolSiC™ Trench MOSFET and High Current Pin / NTC. Potential applications include energy storage systems (ESS), EV charging, UPS systems, and solar applications.
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
- Low switching losses, high current density
- High current pin, PressFIT contact technology
- Rugged mounting due to integrated mounting clamps, integrated NTC temperature sensor
- Drain-source voltage is 2000V at Tvj = 25°C
- Continuous DC drain current is 275A at Tvj = 175°C, VGS = 18V, TH = 65°C
- Repetitive peak drain current is 640A ( verified by design, tp limited by Tvjmax)
- Drain-source on-resistance is 2.6mohm typ at VGS = 18V, Tvj = 25°C, ID = 320A
- Total gate charge is 1.56 µC typ at VDD = 1200V, VGS = -3/18V, Tvj = 25°C
- Storage temperature range from -40 to 125°C
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
275A
Drain Source On State Resistance
0.0041ohm
No. of Pins
52Pins
Gate Source Threshold Voltage Max
5.15V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
-
Product Range
EasyPACK Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate