CY62126EV30LL-45ZSXIT

CY62126EV30LL-45ZSXIT is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected (active-low CE HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), both byte high enable and byte low enable are disabled (active-low BHE, active-low BLE HIGH) or during a write operation (active-low CE LOW and active-low WE LOW).

• High speed: 45ns
• Wide voltage range from 2.2V to 3.6V
• Pin compatible with CY62126DV30
• Maximum standby current is 4µA
• Typical active current is 1.3mA at f=1MHz
• Easy memory expansion with active-low CE and active-low OE features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• 44-pin TSOP II package
• Industrial ambient temperature range from -40°C to +85°C