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BSZ123N08NS3GATMA1
Power MOSFET, N Channel, 80 V, 40 A, 0.0123 ohm, PG-TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ123N08NS3GATMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.60R2542
Also Known AsBSZ123N08NS3 G, SP000443632
Your Part Number
Available to Order
| Quantity | Price |
|---|---|
| 1+ | $1.910 |
| 10+ | $1.220 |
| 100+ | $0.817 |
| 500+ | $0.646 |
| 1000+ | $0.633 |
| 2500+ | $0.620 |
| 10000+ | $0.607 |
Price for:Each
Minimum: 1
Multiple: 1
$1.91
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ123N08NS3GATMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.60R2542
Also Known AsBSZ123N08NS3 G, SP000443632
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id40A
Drain Source On State Resistance0.0123ohm
On Resistance Rds(on)0.0103ohm
Transistor Case StylePG-TSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd66W
Gate Source Threshold Voltage Max2.8V
Power Dissipation66W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSZ123N08NS3 G is a 80V N-channel Power MOSFET that offers highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Dual sided cooling
- Low parasitic inductance
- Low profile (<lt/>0.7mm)
- Reduced switching and conduction losses
- Superior thermal resistance
Applications
Alternative Energy, Consumer Electronics, Communications & Networking, Computers & Computer Peripherals, Power Management, LED Lighting, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
40A
On Resistance Rds(on)
0.0103ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
66W
Power Dissipation
66W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0123ohm
Transistor Case Style
PG-TSDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate