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BSZ084N08NS5ATMA1
Power MOSFET, N Channel, 80 V, 40 A, 0.0084 ohm, TSDSON, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $2.040 |
| 10+ | $1.420 |
| 25+ | $1.320 |
| 50+ | $1.220 |
| 100+ | $1.120 |
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| Quantity | Price |
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| 5000+ | $0.752 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ084N08NS5ATMA1
Newark Part No.49AC0113
Product RangeOptiMOS 5
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id40A
Drain Source On State Resistance0.0084ohm
On Resistance Rds(on)0.0071ohm
Transistor Case StyleTSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation63W
Power Dissipation Pd63W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS 5
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
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Product Overview
80V, Optima's™ 5 power transistorIdeal for high frequency switching and synchronous rectification.
- Optimized technology for DC/DC converters
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
- Higher solder joint reliability with enlarged source interconnection
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0084ohm
Transistor Case Style
TSDSON
Rds(on) Test Voltage
10V
Power Dissipation
63W
No. of Pins
8Pins
Product Range
OptiMOS 5
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
On Resistance Rds(on)
0.0071ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
63W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65