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BSZ018NE2LSATMA1
Power MOSFET, N Channel, 25 V, 153 A, 0.0018 ohm, TSDSON-FL, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoBSZ018NE2LSATMA1
Newark Part No.
Re-Reel50Y1827
Cut Tape50Y1827
Also Known AsBSZ018NE2LS, SP000756338
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.06 |
| 10+ | $1.28 |
| 25+ | $1.16 |
| 50+ | $1.04 |
| 100+ | $0.91 |
| 250+ | $0.83 |
| 500+ | $0.76 |
| 1000+ | $0.68 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ018NE2LSATMA1
Newark Part No.
Re-Reel50Y1827
Cut Tape50Y1827
Also Known AsBSZ018NE2LS, SP000756338
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id153A
On Resistance Rds(on)0.0015ohm
Drain Source On State Resistance1800µohm
Transistor Case StyleTSDSON-FL
Transistor MountingSurface Mount
Power Dissipation Pd69W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation69W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSZ018NE2LS is a N-channel Power MOSFET with new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency and system in package. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solution applications. Available in half bridge configuration. It minimizes EMI in the system making external snubber networks obsolete and the products easy to design-in.
- Reduces the number of phases in multiphase converters
- Reduce power losses and increase efficiency for all load conditions
- Save space with smallest packages like CanPAK™
- Optimized for high performance Buck converter (Server, VGA)
- Very Low FOMQOSS for High Frequency SMPS
- Low FOMSW for High Frequency SMPS
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON) @ VGS = 4.5V
- 100% Avalanche tested
- Superior thermal resistance
- Qualified according to JEDE for target applications
- Halogen-free, Green device
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
25V
On Resistance Rds(on)
0.0015ohm
Transistor Case Style
TSDSON-FL
Power Dissipation Pd
69W
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
153A
Drain Source On State Resistance
1800µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
69W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65