Print Page
BSS139H6327XTSA1
Power MOSFET, N Channel, 250 V, 100 mA, 14 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSS139H6327XTSA1
Newark Part No.
Full Reel86AK4542
Re-Reel87X8601
Cut Tape87X8601
Your Part Number
Technical Datasheet
149,352 In Stock
Need more?
149352 Delivery in 1-3 Business Days(US stock)
0 Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST Standard Shipping
Available in quantity shown
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.681 |
| 10+ | $0.384 |
| 25+ | $0.349 |
| 50+ | $0.314 |
| 100+ | $0.279 |
| 250+ | $0.270 |
| 500+ | $0.259 |
| 1000+ | $0.231 |
Full Reel
| Quantity | Price |
|---|---|
| 6000+ | $0.173 |
| 12000+ | $0.167 |
| 24000+ | $0.156 |
| 36000+ | $0.152 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSS139H6327XTSA1
Newark Part No.
Full Reel86AK4542
Re-Reel87X8601
Cut Tape87X8601
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id100mA
On Resistance Rds(on)7.8ohm
Drain Source On State Resistance14ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-1.4V
Power Dissipation Pd360mW
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Alternatives for BSS139H6327XTSA1
1 Product Found
Product Overview
BSS139H6327XTSA1 is a N-channel, SIPMOS® small signal transistor in a PG-SOT-23 package.
- Depletion mode, dv /dt rated
- 0.10A continuous drain current (at T j=25°C), 0.4A pulsed drain current (TA=25°C)
- 6kV/µs reverse diode dv /dt (D=0.1A, VDS=200V, di /dt =200A/µs, T j max=150°C)
- Gate source voltage is ±20V, 350K/W max thermal resistance, junction (ambient)
- 250V minimum drain-source breakdown voltage (VGS=-3V, ID=250µA)
- Gate threshold voltage range from -2.1 to -1V (VDS=3V, ID=56µA)
- 30mA minimum on-state drain current (VGS=0V, VDS=10V)
- 0.13S typical transconductance ( VDS <gt/>2 ID RDS(on)max, ID=0.08A)
- Operating and storage temperature range from -55 to 150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
7.8ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation Pd
360mW
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
100mA
Drain Source On State Resistance
14ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-1.4V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
-
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate