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BSD223PH6327XTSA1
Power MOSFET, P Channel, 20 V, 390 mA, 1.2 ohm, SOT-363, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.469 |
| 10+ | $0.304 |
| 25+ | $0.269 |
| 50+ | $0.232 |
| 100+ | $0.197 |
| 250+ | $0.181 |
| 500+ | $0.165 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSD223PH6327XTSA1
Newark Part No.12AC9450
Product RangeOptiMOS P
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id390mA
On Resistance Rds(on)0.7ohm
Drain Source On State Resistance1.2ohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation Pd250mW
Power Dissipation250mW
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeOptiMOS P
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
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Product Overview
- 20V, 390mA OptiMOS ™-P P-channel small signal transistor in 6 pin SOT-363 package
- Dual P-channel
- Enhancement mode
- Super logic level (2.5V rated)
- Avalanche rated
- dv/dt rated
- Qualified according to AEC-Q101
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.7ohm
Transistor Case Style
SOT-363
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
250mW
No. of Pins
6Pins
Product Range
OptiMOS P
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
390mA
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate