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BSC600N25NS3GATMA1
Power MOSFET, N Channel, 250 V, 25 A, 0.06 ohm, PG-TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC600N25NS3GATMA1
Newark Part No.79X1338
Also Known AsBSC600N25NS3 G, SP000676402
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.770 |
| 10+ | $2.600 |
| 25+ | $2.370 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$18.85
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC600N25NS3GATMA1
Newark Part No.79X1338
Also Known AsBSC600N25NS3 G, SP000676402
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id25A
On Resistance Rds(on)0.05ohm
Drain Source On State Resistance0.06ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Gate Source Threshold Voltage Max3V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC600N25NS3 G is a N-channel Power MOSFET produce based on OptiMOS™ leading benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
- Industry's lowest RDS (ON)
- Lowest Qg and Qgd
- World's lowest FOM and MSL 1 rated
- Highest efficiency
- Highest Power density
- Lowest board space consumption
- Minimal device paralleling required
- Environmentally friendly
- Easy-to-design-in products
- Ideal for high-frequency switching and synchronous rectification
- Qualified according to JEDEC for target application
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Industrial, Lighting, Audio
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.05ohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
25A
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
125W
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for BSC600N25NS3GATMA1
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate