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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC120N12LSGATMA1Copy
Newark Part No.91AH5815
Product RangeOptiMOS 2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id68A
On Resistance Rds(on)0.0098ohm
Drain Source On State Resistance9800µohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.85V
Power Dissipation Pd114W
Power Dissipation114W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS 2
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
120V
On Resistance Rds(on)
0.0098ohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation Pd
114W
No. of Pins
8Pins
Product Range
OptiMOS 2
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
68A
Drain Source On State Resistance
9800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.85V
Power Dissipation
114W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability