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BSC082N10LSGATMA1
MOSFET Transistor, N Channel, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC082N10LSGATMA1
Newark Part No.50Y1806
Product RangeOptiMOS 2 Series
Your Part Number
Technical Datasheet
Packaging Options
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC082N10LSGATMA1
Newark Part No.50Y1806
Product RangeOptiMOS 2 Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id100A
Drain Source On State Resistance8200µohm
On Resistance Rds(on)0.0068ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Power Dissipation Pd156W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation156W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS 2 Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
8200µohm
Transistor Case Style
TDSON
Power Dissipation Pd
156W
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
OptiMOS 2 Series
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.0068ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate