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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC080N12LSGATMA1
Newark Part No.91AH5813
Product RangeOptiMOS 2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id99A
Drain Source On State Resistance6500µohm
On Resistance Rds(on)0.0065ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.85V
Power Dissipation Pd156W
Power Dissipation156W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS 2
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
120V
Drain Source On State Resistance
6500µohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation Pd
156W
No. of Pins
8Pins
Product Range
OptiMOS 2
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
99A
On Resistance Rds(on)
0.0065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.85V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability