Print Page
BSC060N10NS3GATMA1
Power MOSFET, N Channel, 100 V, 90 A, 0.006 ohm, PG-TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC060N10NS3GATMA1Copy
Manufacturer Standard Lead Time19 weeks
Newark Part No.
Full Reel86AK4451
Re-Reel79X1333RL
Cut Tape79X1333
Also Known AsBSC060N10NS3 G, SP000446584
Your Part Number
18,881 In Stock
20,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.100 | $3.10 |
| Total Price | $3.10 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.100 |
| 50+ | $1.540 |
| 100+ | $1.390 |
| 250+ | $1.280 |
| 500+ | $1.030 |
| 1000+ | $1.010 |
| 2500+ | $0.989 |
| 5000+ | $0.968 |
Full Reel
| Quantity | Price |
|---|---|
| 5000+ | $0.947 |
| 15000+ | $0.928 |
| 25000+ | $0.909 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC060N10NS3GATMA1Copy
Manufacturer Standard Lead Time19 weeks
Newark Part No.
Full Reel86AK4451
Re-Reel79X1333RL
Cut Tape79X1333
Also Known AsBSC060N10NS3 G, SP000446584
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id90A
On Resistance Rds(on)0.0053ohm
Drain Source On State Resistance0.006ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSC060N10NS3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Halogen-free
- MSL1 rated 2
Applications
Power Management, Audio, Motor Drive & Control, Industrial, Automotive
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0053ohm
Transistor Case Style
TDSON
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
2.7V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
90A
Drain Source On State Resistance
0.006ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for BSC060N10NS3GATMA1
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
