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BSC047N08NS3GATMA1
Power MOSFET, N Channel, 80 V, 100 A, 0.0047 ohm, PG-TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC047N08NS3GATMA1
Newark Part No.60R2492
Also Known AsSP000436372
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 1+ | $4.16 |
| 10+ | $2.86 |
| 100+ | $2.07 |
| 500+ | $1.78 |
| 1000+ | $1.75 |
| 2500+ | $1.60 |
| 5000+ | $1.45 |
Price for:Each
Minimum: 1
Multiple: 1
$4.16
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC047N08NS3GATMA1
Newark Part No.60R2492
Also Known AsSP000436372
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id100A
On Resistance Rds(on)0.0039ohm
Drain Source On State Resistance0.0047ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Gate Source Threshold Voltage Max2.8V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSC047N08NS3 G is a 80V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Dual sided cooling
- Low parasitic inductance
- Low profile (<lt/>0.7mm)
- Reduced switching and conduction losses
- Very low on-resistance RDS(on)
- Superior thermal resistance
Applications
Alternative Energy, Consumer Electronics, Communications & Networking, Computers & Computer Peripherals, Power Management, LED Lighting, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0047ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
125W
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0039ohm
Transistor Case Style
PG-TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65