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BSC028N06LS3GATMA1
Power MOSFET, N Channel, 60 V, 100 A, 0.0028 ohm, PG-TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC028N06LS3GATMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.
Full Reel86AK4433
Re-Reel79X1328RL
Cut Tape79X1328
Also Known AsBSC028N06LS3 G, SP000453652
Your Part Number
2,559 In Stock
90,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.370 | $3.37 |
| Total Price | $3.37 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.370 |
| 50+ | $1.680 |
| 100+ | $1.520 |
| 250+ | $1.380 |
| 500+ | $1.230 |
| 1000+ | $1.210 |
| 2500+ | $1.180 |
| 5000+ | $1.160 |
Full Reel
| Quantity | Price |
|---|---|
| 5000+ | $1.600 |
| 15000+ | $1.570 |
| 25000+ | $1.540 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC028N06LS3GATMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.
Full Reel86AK4433
Re-Reel79X1328RL
Cut Tape79X1328
Also Known AsBSC028N06LS3 G, SP000453652
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id100A
On Resistance Rds(on)0.0023ohm
Drain Source On State Resistance0.0028ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Power Dissipation Pd139W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation139W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSC028N06LS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. The MOSFET features 40% lower RDS (on) than alternative devices. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Saving space
- Very low voltage overshoot
- Superior thermal resistance
Applications
Power Management, Alternative Energy, Motor Drive & Control, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0023ohm
Transistor Case Style
TDSON
Power Dissipation Pd
139W
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0028ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
139W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Alternatives for BSC028N06LS3GATMA1
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate