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BSC011N03LSIATMA1
Power MOSFET, N Channel, 30 V, 100 A, 0.0011 ohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC011N03LSIATMA1Copy
Newark Part No.
Re-Reel50Y1793
Cut Tape50Y1793
Also Known AsBSC011N03LSI, SP000884574
Your Part Number
7,447 In Stock
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Delivery in 4-6 Business Days(UK stock)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $2.120 | $10.60 |
| Total Price | $10.60 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $2.120 |
| 10+ | $1.260 |
| 25+ | $1.130 |
| 50+ | $1.000 |
| 100+ | $0.878 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC011N03LSIATMA1Copy
Newark Part No.
Re-Reel50Y1793
Cut Tape50Y1793
Also Known AsBSC011N03LSI, SP000884574
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100A
On Resistance Rds(on)900µohm
Drain Source On State Resistance0.0011ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd96W
Gate Source Threshold Voltage Max2V
Power Dissipation96W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSC011N03LSI is a N-channel Power MOSFET features ultra low gate and output charge. With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency and system in package. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions. It is tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life.
- Lowest ON-state resistance in small footprint packages
- Easy to design in
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Reducing power losses
- Optimized for high performance SMPS
- Integrated monolithic Schottky-like diode
- Very low ON-resistance RDS (ON) @ VGS = 4.5V
- 100% Avalanche tested
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
900µohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0011ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
96W
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate