AUIRF8739L2TR

AUIRF8739L2TR is an automotive HEXFET® power MOSFET. This HEXFET® power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF8739L2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.

• Advanced process technology
• Optimized for automotive motor drive, DC-DC and other heavy load applications
• Exceptionally small footprint and low profile
• High power density, low parasitic parameters, dual sided cooling
• Repetitive avalanche allowed up to Tjmax
• DirectFET® package
• Drain-to-source breakdown voltage is 40V at VGS = 0V, ID = 250µA, TJ = 25°C
• Static drain-to-source on-resistance is 0.35mohm typ at VGS = 10V, ID = 195A
• Operating junction and storage temperature range from -55 to + 175°C
• Drain-to-source leakage current is 1.0µA at VDS = 40V, VGS = 0V, TJ = 25°C