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ManufacturerINFINEON
Manufacturer Part NoAUIRF1324S-7P
Newark Part No.29T7219
Your Part Number
Technical Datasheet
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Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF1324S-7P
Newark Part No.29T7219
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds24V
Continuous Drain Current Id429A
Drain Source On State Resistance0.001ohm
On Resistance Rds(on)800µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd300W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation300W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (27-Jun-2018)
Product Overview
The AUIRF1324S-7P is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
- Advanced process technology
- Repetitive avalanche allowed up to Tjmax
Applications
Automotive, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
429A
On Resistance Rds(on)
800µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
24V
Drain Source On State Resistance
0.001ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
300W
Gate Source Threshold Voltage Max
2V
No. of Pins
7Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate