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STB7NK80ZT4
Power MOSFET, N Channel, 800 V, 2.6 A, 1.5 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB7NK80ZT4Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel33R1130RL
Cut Tape33R1130
Your Part Number
503 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $4.320 | $4.32 |
| Total Price | $4.32 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $4.320 |
| 50+ | $2.840 |
| 100+ | $2.150 |
| 250+ | $2.000 |
| 500+ | $1.840 |
| 1000+ | $1.740 |
| 2500+ | $1.710 |
| 5000+ | $1.670 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB7NK80ZT4Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel33R1130RL
Cut Tape33R1130
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id2.6A
Drain Source On State Resistance1.5ohm
On Resistance Rds(on)1.5ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STB7NK80ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- 100% Avalanche tested
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.6A
On Resistance Rds(on)
1.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.5ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
