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NTS4001NT1G
Power MOSFET, N Channel, 30 V, 270 mA, 1.5 ohm, SOT-323, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNTS4001NT1GCopy
Newark Part No.
Full Reel29X6223
Cut Tape83H7842
Your Part Number
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|---|---|---|---|
| Cut Tape | 1 | $0.411 | $0.41 |
| Total Price | $0.41 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 1+ | $0.411 |
| 25+ | $0.261 |
| 50+ | $0.217 |
| 100+ | $0.173 |
| 250+ | $0.154 |
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|---|---|
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTS4001NT1GCopy
Newark Part No.
Full Reel29X6223
Cut Tape83H7842
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id270mA
On Resistance Rds(on)1ohm
Drain Source On State Resistance1.5ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4V
Power Dissipation Pd330mW
Gate Source Threshold Voltage Max1.2V
Power Dissipation330mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
NTS4001NT1G is a single N-channel small signal MOSFET. This device is AEC-Q101 qualified and PPAP capable. It is used in applications such as low-side load switch, Li-ion battery-supplied devices, cell phones, PDAs, DSC, buck converters, and level shifts.
- Low gate charge for fast switching
- ESD protected gate
- 270mA continuous drain current
- 800mA pulse drain current
- Drain-to-source breakdown voltage is 30V minimum at (VGS = 0V, ID = 100µA)
- Gate-to-source leakage current is ±1µA maximum at (VDS = 0V, VGS = ±10V)
- Input capacitance is 20pF typical at (VGS = 0V, f = 1.0MHz, VDS = 5.0V)
- Turn-on delay time is 17ns typical at (VGS = 4.5V, VDD = 5V, ID = 10mA, RG = 50 ohm)
- Gate threshold temperature coefficient is -3.4mV/°C typical at ((TJ = 25°C)
- Junction temperature range from -55°C to 150°C, SC-70 package
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
270mA
Drain Source On State Resistance
1.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
330mW
Power Dissipation
330mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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