Print Page
FDC6303N
Dual MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC6303NCopy
Newark Part No.
Full Reel67R2028
Re-Reel58M6619
Cut Tape58M6619
Your Part Number
315 In Stock
Need more?
Same day shipping
Order before 8pm EST standard shipping
Available in quantity shown
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.752 | $0.75 |
| Total Price | $0.75 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.752 |
| 10+ | $0.426 |
| 25+ | $0.381 |
| 50+ | $0.337 |
| 100+ | $0.291 |
| 250+ | $0.261 |
| 500+ | $0.230 |
| 1000+ | $0.207 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.169 |
| 6000+ | $0.162 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6303NCopy
Newark Part No.
Full Reel67R2028
Re-Reel58M6619
Cut Tape58M6619
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id680mA
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.45ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Alternatives for FDC6303N
1 Product Found
Product Overview
The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
- 8V Gate-source voltage
- 0.68A Continuous drain/output current
- 2A Pulsed drain/output current
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
680mA
Drain Source Voltage Vds
25V
Continuous Drain Current Id N Channel
680mA
Drain Source On State Resistance N Channel
0.45ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
