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PS21963-4
IGBT Module, Three Phase Inverter, 10 A, 2.2 V, 27 W, 100 °C, DIP
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoPS21963-4Copy
Newark Part No.42M7935
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoPS21963-4Copy
Newark Part No.42M7935
Technical Datasheet
IGBT ConfigurationThree Phase Inverter
Transistor PolarityN Channel
DC Collector Current10A
Continuous Collector Current10A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd27W
Power Dissipation27W
Junction Temperature, Tj Max100°C
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max100°C
Transistor Case StyleDIP
IGBT TerminationSolder
No. of Pins25Pins
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Three Phase Inverter
DC Collector Current
10A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
27W
Junction Temperature, Tj Max
100°C
Operating Temperature Max
100°C
IGBT Termination
Solder
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
10A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
27W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
DIP
No. of Pins
25Pins
Collector Emitter Voltage Max
600V
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate