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ZXMC3A17DN8TA
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4.4 A, 4.4 A, 0.05 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoZXMC3A17DN8TA
Newark Part No.62M1299
Your Part Number
Technical Datasheet
168 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.760 |
| 10+ | $1.190 |
| 25+ | $1.080 |
| 50+ | $0.971 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.76
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMC3A17DN8TA
Newark Part No.62M1299
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id5.4A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel4.4A
Continuous Drain Current Id P Channel4.4A
Drain Source On State Resistance N Channel0.05ohm
Drain Source On State Resistance P Channel0.07ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The ZXMC3A17DN8TA is a N/P-channel complementary enhancement-mode MOSFET utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. It is ideal for high efficiency, low voltage and LCD backlighting applications.
- Low ON-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Low profile
Applications
Industrial, Power Management, Motor Drive & Control
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
5.4A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
4.4A
Drain Source On State Resistance P Channel
0.07ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
4.4A
Drain Source On State Resistance N Channel
0.05ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability