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DMT6012LFDF-7
MOSFET, N-CH, 60V, 9.5A, U-DFN2020
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMT6012LFDF-7Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.36AJ3610
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 42 week(s)
| Quantity | Price |
|---|---|
| 5+ | $1.170 |
| 10+ | $0.734 |
| 25+ | $0.650 |
| 50+ | $0.564 |
| 100+ | $0.480 |
| 250+ | $0.425 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.85
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT6012LFDF-7Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.36AJ3610
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id9.5A
Drain Source On State Resistance0.014ohm
On Resistance Rds(on)0.0107ohm
Transistor Case StyleU-DFN2020
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation11W
Power Dissipation Pd11W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.014ohm
Transistor Case Style
U-DFN2020
Rds(on) Test Voltage
10V
Power Dissipation
11W
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
9.5A
On Resistance Rds(on)
0.0107ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
Power Dissipation Pd
11W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate