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DMN63D8L-7
MOSFET, N-CH, 30V, 0.35A, SOT-23
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN63D8L-7Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.28AK8641
Your Part Number
Available to Order
| Quantity | Price |
|---|---|
| 5+ | $0.216 |
| 10+ | $0.125 |
| 25+ | $0.110 |
| 50+ | $0.095 |
| 100+ | $0.080 |
| 250+ | $0.070 |
| 500+ | $0.060 |
| 1000+ | $0.053 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$1.08
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN63D8L-7Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.28AK8641
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id350mA
On Resistance Rds(on)2.8ohm
Drain Source On State Resistance2.8ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation350mW
Power Dissipation Pd350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
2.8ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
350mW
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
350mA
Drain Source On State Resistance
2.8ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
350mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate