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DMN21D2UFB-7B
MOSFET, N-CH, 20V, 0.76A, X1-DFN1006 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN21D2UFB-7B
Newark Part No.28AK8509
Your Part Number
Technical Datasheet
4,780 In Stock
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Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.395 |
| 10+ | $0.248 |
| 25+ | $0.213 |
| 50+ | $0.178 |
| 100+ | $0.143 |
| 250+ | $0.128 |
| 500+ | $0.113 |
| 1000+ | $0.106 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN21D2UFB-7B
Newark Part No.28AK8509
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id760mA
Drain Source On State Resistance0.6ohm
On Resistance Rds(on)0.6ohm
Transistor Case StyleX1-DFN1006
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation380mW
Power Dissipation Pd380mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.6ohm
Transistor Case Style
X1-DFN1006
Rds(on) Test Voltage
4.5V
Power Dissipation
380mW
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
760mA
On Resistance Rds(on)
0.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
380mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability