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DMN2013UFDE-7
MOSFET, N-CH, 20V, 10.5A, U-DFN2020 ROHS COMPLIANT: YES
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| Quantity | Price |
|---|---|
| 1+ | $0.628 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$0.63
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN2013UFDE-7Copy
Newark Part No.36AJ3578
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id10.5A
Drain Source On State Resistance8400µohm
On Resistance Rds(on)0.0084ohm
Transistor Case StyleU-DFN2020
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.1V
Power Dissipation2.03W
Power Dissipation Pd2.03W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
8400µohm
Transistor Case Style
U-DFN2020
Rds(on) Test Voltage
4.5V
Power Dissipation
2.03W
No. of Pins
6Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
10.5A
On Resistance Rds(on)
0.0084ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
Power Dissipation Pd
2.03W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability