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DMG6602SVTX-7
MOSFET, DUAL, N-CH, 30V, 3.4A
Image is for illustrative purposes only. Please refer to product description.
463 In Stock
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| Quantity | Price |
|---|---|
| 5+ | $0.608 |
| 10+ | $0.373 |
| 25+ | $0.328 |
| 50+ | $0.282 |
| 100+ | $0.237 |
| 250+ | $0.208 |
| 500+ | $0.178 |
| 1000+ | $0.160 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.04
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6602SVTX-7Copy
Newark Part No.28AK8420
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id3.4A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.4A
Continuous Drain Current Id P Channel3.4A
Drain Source On State Resistance N Channel0.035ohm
Drain Source On State Resistance P Channel0.035ohm
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.4A
Drain Source On State Resistance P Channel
0.035ohm
No. of Pins
6Pins
Power Dissipation P Channel
1W
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
3.4A
Continuous Drain Current Id N Channel
3.4A
Drain Source On State Resistance N Channel
0.035ohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate