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DMC2038LVT-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.027 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC2038LVT-7
Newark Part No.07AH3728
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.474 |
| 10+ | $0.307 |
| 25+ | $0.273 |
| 50+ | $0.240 |
| 100+ | $0.206 |
| 250+ | $0.184 |
| 500+ | $0.162 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC2038LVT-7
Newark Part No.07AH3728
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id3.7A
Continuous Drain Current Id N Channel3.7A
Continuous Drain Current Id P Channel3.7A
Drain Source On State Resistance N Channel0.027ohm
Drain Source On State Resistance P Channel0.027ohm
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel800mW
Power Dissipation P Channel800mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMC2038LVT-7 is a complementary pair enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include motor control, power management functions, DC-DC converters, and backlighting.
- Low on-resistance, low input capacitance
- Fast switching speed, low input/output leakage
- 20V drain source voltage (P channel/N channel)
- 3.7A continuous drain current (P channel/N channel)
- 0.027ohm drain source on state resistance (P channel/N channel)
- 800mW power dissipation (P channel/N channel)
- TSOT26 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
3.7A
Continuous Drain Current Id P Channel
3.7A
Drain Source On State Resistance P Channel
0.027ohm
No. of Pins
6Pins
Power Dissipation P Channel
800mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
3.7A
Drain Source On State Resistance N Channel
0.027ohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
800mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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