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SI2318DS-T1-E3
EEPROM, Parallel, 512 Kbit, 64K x 8bit, DIP, 32 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2318DS-T1-E3Copy
Newark Part No.06R0714
Product Range512Kbit Parallel EEPROM
Your Part Number
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2318DS-T1-E3Copy
Newark Part No.06R0714
Product Range512Kbit Parallel EEPROM
Technical Datasheet
Memory Density512Kbit
IC Interface TypeParallel
Memory Size512Kbit
EEPROM Memory Configuration64K x 8bit
Memory Configuration64K x 8bit
InterfacesParallel
Memory Interface TypeParallel
Clock Frequency-
Clock Frequency Max-
IC Case / PackageDIP
Memory Case StyleDIP
No. of Pins32Pins
Supply Voltage Min4.5V
Supply Voltage Max5.5V
IC MountingThrough Hole
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range512Kbit Parallel EEPROM
MSL-
SVHCTo Be Advised
Technical Specifications
Memory Density
512Kbit
Memory Size
512Kbit
Memory Configuration
64K x 8bit
Memory Interface Type
Parallel
Clock Frequency Max
-
Memory Case Style
DIP
Supply Voltage Min
4.5V
IC Mounting
Through Hole
Operating Temperature Max
85°C
MSL
-
IC Interface Type
Parallel
EEPROM Memory Configuration
64K x 8bit
Interfaces
Parallel
Clock Frequency
-
IC Case / Package
DIP
No. of Pins
32Pins
Supply Voltage Max
5.5V
Operating Temperature Min
-40°C
Product Range
512Kbit Parallel EEPROM
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate