Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation Pd
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Transistor Case Style | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$594.020 5+$582.140 10+$570.260 25+$558.380 | Chopper | N Channel | N Channel | 180A | 1.2kV | Module | 5.6V | 880W | 880W | 150°C | ||||||
Each | 1+$551.970 5+$540.930 10+$529.890 25+$518.850 | Half Bridge | Dual N Channel | Dual N Channel | 180A | 1.2kV | Module | 5.6V | 880W | 880W | 150°C | ||||||

