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Silicon Carbide (SiC) MOSFETs & Modules :

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Manufacturer Part No
Order Code
Manufacturer / Description
Availability
Price for
Price
Quantity
MOSFET Module Configuration
Transistor Polarity
Channel Type
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rds(on)
Drain Source On State Resistance
Transistor Case Style
Rds(on) Test Voltage
Gate Source Threshold Voltage Max
Power Dissipation Pd
Power Dissipation
Operating Temperature Max
98Y6008

RoHS

Each
1+$1,491.140
5+$1,476.160
10+$1,461.170
25+$1,401.220
Half Bridge
-
Dual N Channel
404A
1.2kV
0.005ohm
5000µohm
Module
20V
2.3V
1.66kW
1.66kW
150°C
93AC7201

RoHS

Each
1+$894.950
5+$885.520
10+$876.370
25+$839.370
Half Bridge
Dual N Channel
Dual N Channel
381A
1.2kV
0.005ohm
5000µohm
Module
18V
5.6V
-
-
150°C
93AC7200

RoHS

Each
1+$894.950
5+$885.520
10+$876.370
25+$839.370
Half Bridge
Dual N Channel
Dual N Channel
381A
1.2kV
0.005ohm
5000µohm
Module
18V
5.6V
-
-
150°C
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