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MJ11033G
TRANSISTOR, BIPOL, PNP, 120V, TO-3-2
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoMJ11033GCopy
Manufacturer Standard Lead Time17 weeks
Newark Part No.82Y7007
Your Part Number
Available to Order
| Quantity | Price |
|---|---|
| 1+ | $15.570 |
| 10+ | $14.730 |
| 25+ | $14.430 |
| 50+ | $13.350 |
| 100+ | $12.810 |
| 250+ | $11.560 |
| 500+ | $11.320 |
Price for:Each
Minimum: 1
Multiple: 1
$15.57
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ11033GCopy
Manufacturer Standard Lead Time17 weeks
Newark Part No.82Y7007
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo120V
Collector Emitter Voltage Max120V
Power Dissipation Pd300W
Transition Frequency-
Continuous Collector Current50A
DC Collector Current50A
Power Dissipation300W
RF Transistor CaseTO-3
No. of Pins2Pins
Transistor Case StyleTO-3
DC Current Gain hFE18000hFE
Transistor MountingThrough Hole
DC Current Gain hFE Min400hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
120V
Transition Frequency
-
DC Collector Current
50A
RF Transistor Case
TO-3
Transistor Case Style
TO-3
Transistor Mounting
Through Hole
Operating Temperature Max
200°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Collector Emitter Voltage V(br)ceo
120V
Power Dissipation Pd
300W
Continuous Collector Current
50A
Power Dissipation
300W
No. of Pins
2Pins
DC Current Gain hFE
18000hFE
DC Current Gain hFE Min
400hFE
Product Range
-
MSL
-
Technical Docs (1)
Alternatives for MJ11033G
1 Product Found
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate