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SEMIX202GB12E4S
IGBT Module, Dual, 314 A, 1.8 V, 175 °C, SEMiX 2s
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ManufacturerSEMIKRON
Manufacturer Part NoSEMIX202GB12E4SCopy
Manufacturer Standard Lead Time26 weeks
Newark Part No.11R7829
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
| Quantity | Price |
|---|---|
| 6+ | $132.390 |
| 18+ | $127.090 |
| 30+ | $121.790 |
Price for:Each
Minimum: 6
Multiple: 6
$794.34
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX202GB12E4SCopy
Manufacturer Standard Lead Time26 weeks
Newark Part No.11R7829
Technical Datasheet
IGBT ConfigurationDual
Transistor PolarityDual N Channel
DC Collector Current314A
Continuous Collector Current314A
Collector Emitter Saturation Voltage Vce(on)1.8V
Collector Emitter Saturation Voltage1.8V
Power Dissipation-
Power Dissipation Pd-
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max175°C
Junction Temperature, Tj Max175°C
Transistor Case StyleSEMiX 2s
No. of Pins16Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 3 [Trench]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
Dual
DC Collector Current
314A
Collector Emitter Saturation Voltage Vce(on)
1.8V
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.2kV
Junction Temperature, Tj Max
175°C
No. of Pins
16Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
Dual N Channel
Continuous Collector Current
314A
Collector Emitter Saturation Voltage
1.8V
Power Dissipation Pd
-
Operating Temperature Max
175°C
Transistor Case Style
SEMiX 2s
IGBT Termination
Stud
IGBT Technology
IGBT 3 [Trench]
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate