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CM400DY-24A
IGBT Module, Dual [Half Bridge], 400 A, 3 V, 2.71 kW, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM400DY-24ACopy
Manufacturer Standard Lead Time48 weeks
Newark Part No.19K9225
Product RangeA Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 48 week(s)
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| Quantity | Price |
|---|---|
| 10+ | $178.480 |
| 20+ | $175.830 |
| 30+ | $173.260 |
| 50+ | $162.860 |
| 100+ | $159.600 |
| 250+ | $156.350 |
| 500+ | $153.090 |
| 1000+ | $149.830 |
Price for:Each
Minimum: 10
Multiple: 10
$1,784.80
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM400DY-24ACopy
Manufacturer Standard Lead Time48 weeks
Newark Part No.19K9225
Product RangeA Series
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
DC Collector Current400A
Continuous Collector Current400A
Collector Emitter Saturation Voltage3V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd2.71kW
Power Dissipation2.71kW
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins7Pins
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product RangeA Series
SVHCTo Be Advised
Product Overview
The CM400DY-24A is a dual IGBTMOD™ Module designed for use in switching applications. The A series module consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
- Low drive power
- Low collector-to-emitter saturation voltage
- Discrete super-fast recovery free-wheel diode
- Isolated base plate for easy heat sinking
Applications
Motor Drive & Control, Power Management
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
400A
Collector Emitter Saturation Voltage
3V
Power Dissipation Pd
2.71kW
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Tab
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
400A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
2.71kW
Operating Temperature Max
150°C
Transistor Case Style
Module
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Product Range
A Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate