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SEMIX353GB126HDS
IGBT Module, Dual, 364 A, 1.7 V, 125 °C, Module
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ManufacturerSEMIKRON
Manufacturer Part NoSEMIX353GB126HDS
Newark Part No.16M0114
Product RangeSEMiX Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX353GB126HDS
Newark Part No.16M0114
Product RangeSEMiX Series
Technical Datasheet
Transistor PolarityDual NPN
IGBT ConfigurationDual
DC Collector Current364A
Continuous Collector Current364A
Collector Emitter Saturation Voltage1.7V
Collector Emitter Saturation Voltage Vce(on)1.7V
Power Dissipation Pd-
Power Dissipation-
Junction Temperature, Tj Max125°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max125°C
Transistor Case StyleModule
IGBT TerminationStud
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product RangeSEMiX Series
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Transistor Polarity
Dual NPN
DC Collector Current
364A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
-
Junction Temperature, Tj Max
125°C
Operating Temperature Max
125°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Product Range
SEMiX Series
IGBT Configuration
Dual
Continuous Collector Current
364A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Technology
-
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate