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NVNJWS200N031LTAG
MOSFET, N-CH, 30V, 3.3A, XDFNW
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVNJWS200N031LTAGCopy
Manufacturer Standard Lead Time19 weeks
Newark Part No.
Re-Reel06AN0869RL
Cut Tape06AN0869
Your Part Number
4,400 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.966 | $4.83 |
| Total Price | $4.83 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.966 |
| 10+ | $0.627 |
| 15+ | $0.577 |
| 25+ | $0.528 |
| 50+ | $0.478 |
| 125+ | $0.429 |
| 250+ | $0.420 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVNJWS200N031LTAGCopy
Manufacturer Standard Lead Time19 weeks
Newark Part No.
Re-Reel06AN0869RL
Cut Tape06AN0869
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.3A
Drain Source On State Resistance0.2ohm
Transistor Case StyleXDFNW
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation4.1W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.3A
Transistor Case Style
XDFNW
Rds(on) Test Voltage
4.5V
Power Dissipation
4.1W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability