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APT36N90BC3G
Power MOSFET, N Channel, 900 V, 36 mA, 0.1 ohm, TO-247, Through Hole
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ManufacturerMICROSEMI
Manufacturer Part NoAPT36N90BC3G
Newark Part No.79R4880
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
Product Information
ManufacturerMICROSEMI
Manufacturer Part NoAPT36N90BC3G
Newark Part No.79R4880
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id36mA
On Resistance Rds(on)0.1ohm
Drain Source On State Resistance0.1ohm
Transistor MountingThrough Hole
Power Dissipation Pd390W
Rds(on) Test Voltage10V
Transistor Case StyleTO-247
Gate Source Threshold Voltage Max3V
Power Dissipation390W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (07-Jul-2017)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
900V
On Resistance Rds(on)
0.1ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
36mA
Drain Source On State Resistance
0.1ohm
Power Dissipation Pd
390W
Transistor Case Style
TO-247
Power Dissipation
390W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (07-Jul-2017)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Jul-2017)
Download Product Compliance Certificate
Product Compliance Certificate