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GA20SICP12-263
JFET Transistor, 1.2 kV, 20 A, TO-263, 3 Pin, 175 °C
Image is for illustrative purposes only. Please refer to product description.
ManufacturerGENESIC
Manufacturer Part NoGA20SICP12-263
Newark Part No.08X5874
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
Product Information
ManufacturerGENESIC
Manufacturer Part NoGA20SICP12-263
Newark Part No.08X5874
Technical Datasheet
Gate Source Breakdown Voltage Max1.2kV
Zero Gate Voltage Drain Current Max20A
Drain Source Voltage Vds1.2kV
Power Dissipation157W
Continuous Drain Current Id20A
Gate Source Cutoff Voltage Max-
Transistor Case StyleTO-263
Power Dissipation Pd157W
No. of Pins3 Pin
Operating Frequency Min-
Operating Frequency Max-
Operating Temperature Max175°C
RF Transistor CaseTO-263 (D2PAK)
Channel TypeN Channel
No. of Pins3Pins
Transistor MountingSurface Mount
Product Range-
Qualification-
SVHCLead
Technical Specifications
Gate Source Breakdown Voltage Max
1.2kV
Drain Source Voltage Vds
1.2kV
Continuous Drain Current Id
20A
Transistor Case Style
TO-263
No. of Pins
3 Pin
Operating Frequency Max
-
RF Transistor Case
TO-263 (D2PAK)
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Zero Gate Voltage Drain Current Max
20A
Power Dissipation
157W
Gate Source Cutoff Voltage Max
-
Power Dissipation Pd
157W
Operating Frequency Min
-
Operating Temperature Max
175°C
Channel Type
N Channel
Transistor Mounting
Surface Mount
Qualification
-
SVHC
Lead
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate